Title of Research Group: Nanomaterials Processing Laboratory
Principal Investigator: Prof. Patrick McNally
Institution: Dublin City University.
School: School of Electronic Engineering.
Research: We are developing groundbreaking new in situ, nondestructive analysis techniques to measure the warpage of semiconductor die inside fully encapsulated advanced packaged chips running from standard ball grid array (BGA) packages through to nascent 3-D multiply stacked die ICs and micro-electromechanical systems (MEMS). This work addresses major problems in next generation “More than Moore” technology as we provide the only truly non-destructive analysis of semiconductor die inside these packages, with a particular emphasis on how processing impacts chip performance and reliability. We also have the capability to do real-time thermal anneal and electrical power up measurements. None of this would have been possible without access to the relevant x-ray synchrotron facilities.
Techniques: X-Ray Diffraction Imaging, X-Ray Topography, High pressure X-Ray Powder Diffraction.
Facilities: Diamond Light Source,UK; ANKA, Germany; HASYLAB- PETRA III.
Beamlines: Diamond Light Source, B16; ANKA, Topo-Tomo; HASYLAB, PETRA III, P02.2.
Group (as of 2014): 1 PhD
Participating group members at SR/FEL/neutron facilities (period 2008-2014):
4 Ph.D and 4 PD.
PhDs = Jennifer Stopford, Ken Horan, Chiu Soon Wong, David Allen.
PDs = Suresh Uppal, Nick Bennett, Rajani KV, Aidan Cowley.
Impact: This works directly aligns to Priority Area M – Processing Technologies and Novel Materials. We are currently fostering interest a numbner of major multinational companies, which are working closely with us on this new technology. None of this would have been possible without access to the relevant x-ray synchrotron facilities.
Quote: “It is unlikely that x-ray synchrotron source (or free electron laser) facilities will be built in Ireland so it is an absolute necessity for the scientific community to travel to interact with these communities.” – Patrick McNally
“Development of B-spline X-ray Diffraction Imaging Techniques for Die Warpage and Stress Monitoring Inside Fully Encapsulated Packaged Chips”, C.S. Wong, A. Ivankovic, A. Cowley, N.S. Bennett, A.N. Danilewsky, M. Gonzalez, V. Cherman, B. Vandevelde, I. De Wolf and P.J. McNally, Proc. 64th IEEE Electronic Components & Technology Conf. (ECTC 2014), Lake Buena Vista, Florida, USA, 27-30 May, 2014, pp. 1517- 1522 (ISBN 978-1-4799-2407-3).
“Crack propagation and fracture in silicon wafers under thermal stress”, A. Danilewsky, J. Wittge, K. Kiefl, D. Allen, P. McNally, J. Garagorri, M. R. Elizalde, T. Baumbach and B. K. Tanner, J.. Appl. Cryst. 46 pp. 849-855(2013). [ doi:10.1107/S0021889813003695 ]
“White beam topography of 300 mm Si wafers” A. N. Danilewsky, J. Wittge, A. Rack, T. Weitkamp, R. Simon, T. Baumbach and P. McNally, J. Mater. Sci: Mater. Electron. 19 S269–S272 (2008) [DOI 10.1007/s10854-007-9480-5]